ADI Models_CHIP ENERGY INTERNATIONAL CO., LIMITED

RF Detector Chip, 2 MHz to 1.6 GHz, -35 dBm to 10 dBm Input Power, 2.7 V to 5.25 V Supply, μMAX-8

RF Detector Chip, 2 MHz to 1.6 GHz, -30 dBm to 15 dBm Input Power, 2.7 V to 5.25 V Supply, μMAX-8

Low Noise Amplifier, 27 dB Gain, 2.5 dB Noise, 1 GHz to 22 GHz, 3 to 5.5 V, LFCSP-EP-16

Low Noise Amplifier, 26.5 dB Gain, 1.8 dB Noise, 23 GHz to 31 GHz, 1 to 3.5 V, Bare DIE-8

RF Amplifier, 15.5dB Gain, 5dB Noise, 0 to 10GHz, 15V Supply, -40 to 85°C, LFCSP-EP-32

RF Amplifier, 1 GHz to 11 GHz, 5 V Supply, QFN-EP-24, -40 °C to 85 °C

RF Amplifier, 5GHz to 11GHz, 19.5dB Gain, LFCSP-EP-16, -40℃ to 85℃

RF switch, silicon, SP4T, 100 MHz to 6 GHz, 3.3 V to 5 V supply, -40 to 105 degrees C, LFCSP-EP-16

RF Switch, Non-Reflective, SPDT, 14 GHz, -40 to 85 degrees C, QFN-EP-16

RF Amplifier, 24 GHz to 35 GHz, 5 V Supply, LCC-24, -40 °C to 85 °C

RF Amplifier, 23dB Gain, 11dB Noise, 18 to 44GHz, 5V Supply, -40 to 85°C, LCC-EP-16

RF Amplifier, 15 GHz to 20 GHz, 6 V Supply, LCC-EP-16, -40 °C to 85 °C

RF switch, T/R, SPDT, forward controlled, 6 GHz, -40 to 85 °C, MSOP-EP-8

RF Amplifier, 24GHz to 29.5GHz, 24dB Gain, LCC-24, -40℃ to 85℃

Active Multiplier, X2 Frequency, 13 to 24.6 GHz, 4.5 V to 5.5 V Supply, -40 to 85 degrees Celsius, LCC-12

Power Detector, RMS, 70 GHz, -41.7 to 5.2 dBm Input Power, 2.7 to 3.6 V, -40 to 125 °C, DFN-EP-8

RF Amplifier, 6.5GHz to 13.5GHz, 14dB Gain, LFCSP-EP-16, -40℃ to 85℃

Power Detector, RMS, 70 GHz, -41.7 to 5.2 dBm Input Power, 2.7 to 3.6 V, -40 to 105 °C, DFN-EP-8

RF Amplifier, 0 Hz to 5 GHz, 5 V Supply, QFN-EP-32, -40 °C to 85 °C

RF IC,Demodulator,Quadrature,VGA,40 to 500 MHz,1.8 to 5.25 V Supply,-40 to 85 °C,QFN-EP-16